Numerical Aspects of the Simulation of Two-Dimensional Ferroelectric Hysteresis
نویسندگان
چکیده
Simulation of ferroelectric hysteresis allows the analysis of nonvolatile memory cells which are based on ferroelectric materials. We give an overview of our algorithm for the calculation of e ects caused by eld rotation. Implementation of this algorithm into a device simulator reveals interesting numerical aspects. One of these is that the locus curves of the hysteresis are nonsymmetric, thus demanding a quite sophisticated sign handling to the elds and the uxes. Another change to common properties is the occurance of history information, which leads to an extension of the discretization. Also the iteration scheme has to be modi ed, in order to achieve convergence for nontrivial device structures. The abilities of our simulator are demonstrated by the simulation of a ferroelectric memory eld e ect transistor (FEMFET).
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